7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Input voltage

VIN

-0.3

20

V

Enable voltage

EN

-0.3

VIN + 0.3

V

Output voltage

VOUT

-0.3

6

V

Output short circuit current

ISC

25

mA

Operating temperature range

TA

-55

150

°C

Storage temperature range

Tstg

-65

170

°C

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied. These are stress ratings only and functional operation of the device at these or any other conditions

beyond those specified in the Electrical Characteristics Table is not implied.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001,

all pins(1)

± 1000

V

Charged device model (CDM), per JEDEC specification

JESD22-C101, all pins(2)

± 500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

VOUT + VDO (1)

18

V

EN

Enable voltage

0

VIN

V

IL

Output current

–10

10

mA

TA

Operating temperature

–40

25

125

°C

(1)

VDO = Dropout voltage. For VOUT < 2.5 V minimum VIN = 2.75 V

7.4 Thermal Information

THERMAL METRIC(1)

REF70xx

UNIT

FKH (CERAMIC)

DGK (MSOP)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

95.8

201.2

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

59.0

85.7

°C/W

RθJB

Junction-to-board thermal resistance

58.3

122.9

°C/W

ΨJT

Junction-to-top characterization parameter

48.2

21.2

°C/W

ΨJB

Junction-to-board characterization parameter

58.1

121.4

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

28.5

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

REF70

SNAS781F – OCTOBER 2020 – REVISED MARCH 2023

www.ti.com

6

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