Nexperia

PDTC143EM

50 V, 100 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

-10

30

V

IO

output current

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] [2]

-

250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

[1] Reflow soldering is the only recommended soldering method.

[2] Device mounted on an FR4 PCB with 70 µm copper strip line, standard footprint.

Tamb (°C)

-75

175

125

25

75

-25

aaa-032854

100

200

300

Ptot

(mW)

0

Fig. 1. Power derating curve

PDTC143EM

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© Nexperia B.V. 2023. All rights reserved

Product data sheet

1 April 2023

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