2PD1820AS datasheet(3/7 Pages) NEXPERIA

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1999 Apr 12

NXP Semiconductors

Product data sheet

NPN general purpose transistor

2PD1820A

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 50 V)

• Low collector-emitter saturation voltage (max. 600 mV).

APPLICATIONS

• General purpose switching and amplification, especially

for portable equipment.

DESCRIPTION

NPN transistor in an SC-70; SOT323 plastic package.

PNP complement: 2PB1219A.

MARKING

Note

∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

PINNING

TYPE NUMBER

MARKING CODE(1)

2PD1820AQ

∗Q

2PD1820AR

∗R

2PD1820AS

∗S

DESCRIPTION

base

emitter

collector

Fig.1

Simplified outline (SC-70; SOT323) and

symbol.

handbook, halfpage

MAM336

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

500

ICM

peak collector current

−

IBM

peak base current

−

200

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

200

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

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