SILICON TRANSISTOR

FEATURES

•

Low Current Consumption and High Gain

|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

•

Mini-Mold package

EIAJ: SC-59

ORDERING INFORMATION

PART

QUANTITY

ARRANGEMENT

NUMBER

2SC5177-T1

3 000 units/reel

2SC5177-T2

3 000 units/reel

Remark Contact your NEC sales representatives to order samples

for evaluation (available in batches of 50).

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

5V

Collector to Emitter Voltage

VCEO

3V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

10

mA

Total Power Dissipation

PT

30

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

2SC5177

Document No. P12101EJ2V0DS00 (2nd edition)

(Previous No. TC-2474)

Date Published

November 1996 N

Printed in Japan

©

1994

DATA SHEET

NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

PACKAGE DIMENSIONS

(Units: mm)

CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Embossed tape, 8 mm wide, pin

No. 3 (collector) facing the

perforations

Embossed tape, 8 mm wide, pins

No. 1 (emitter) and No. 2 (base)

facing the perforations

Marking

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

2

1

2.8±0.2

1.5

0.65

+0.1

–0.15

3