2SC4814 datasheet(4/8 Pages) RENESAS

tên linh kiện	2SC4814

Giải thích chi tiết về linh kiện	SILICON POWER TRANSISTOR

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Data Sheet D15604EJ2V0DS

2SC4814

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB = 120 V, IE = 0

µA

Emitter cutoff current

IEBO

VEB = 5 V, IC = 0

µA

DC current gain

hFE1*VCE = 2 V, IC = 1.0 A

300

700

1,200

−

DC current gain

hFE2*VCE = 2 V, IC = 1.5 A

250

600

−

Collector saturation voltage

VCE(sat)*IC = 1.5 A, IB = 10 mA

0.3

Base saturation voltage

VBE(sat)*IC = 1.5 A, IB = 10 mA

1.3

Gain bandwidth product

VCE = 10 V, IC = 1.0 A

MHz

Collector capacitance

Cob

VCE = 10 V, IE = 0 , f = 1 MHz

Turn-on time

ton

0.5

µs

Storage time

tstg

2.0

µs

Fall time

IC = 1.5 A, IB1 =

−IB2 = 10 mA

RL = 8.0

Ω, VCC = 12 V

Refer to the test circuit.

0.5

µs

* Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

PACKAGE DRAWING (UNIT: mm)

TAPING SPECIFICATION

Electrode Connection

1. Base

2. Collector

3. Emitter

EQUIVALENT CIRCUIT

0.7 MAX.

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