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SILICON POWER TRANSISTOR

2SC4336

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

Document No. D17261EJ1V0DS00 (1st edition)

Date Published July 2004 NS CP(K)

Printed in Japan

2004

DESCRIPTION

The 2SC4336 is a mold power transistor developed for high-

speed switching and features a very low collector-to-emitter

saturation. This transistor is ideal for use in switching power

supplies, DC/DC converters, motor drivers, solenoid drivers, and

other low-voltage power supply devices, as well as for high-current

switching.

FEATURES

• Mold package that does not require an insulating board or

insulation bushing

• Fast switching speed

• Low collector-to-emitter saturation voltage

VCE(sat) ≤ 0.3 V MAX. (IC = 6.0 A)

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SC4336

Isolated TO-220 (MP-45)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to base voltage

VCBO

100

V

Collector to emitter voltage

VCEO

100

V

Emitter to base voltage

VEBO

7.0

V

Collector current (DC)

IC(DC)

10

A

Collector current (pulse)

Note

IC(pulse)

20

A

Base current (DC)

IB(DC)

6.0

A

Total power dissipation (TC = 25

°C)

PT

30

W

Total power dissipation (TA = 25

°C)

PT

2.0

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

−55 to +150

°C

Note PW

≤ 300

µs, Duty Cycle ≤ 10%

PACKAGE DRAWING (Unit: mm)

10.5 MAX.

7 ±0.2

3.2 ±0.2

φ

3.0 MAX.

1.3 ±0.2

0.8 ±0.1

2.54 TYP.

2.54 TYP.

1.5 ±0.2

4.7 MAX.

2.5 ±0.1

0.5 ±0.1

123

1: Base

2: Collector

3: Emitter