©

1996

DATA SHEET

SILICON TRANSISTOR

2SC4187

DESCRIPTION

The 2SC4187 is designed primarily for use in low voltage and low

current application up to UHF band. The 2SC4187 is ideal for pagers,

electro-optic detector postamplifier applications, and other battery pow-

ered systems. Super mini mold package makes it suitable for use in small

type equipments such as HICs.

FEATURES

•

Low Noise : NF = 3.0 dB TYP. @VCE = 1 V, IC = 250

µA, f = 1.0 GHz

•

High Gain : |S21e|2 = 6.5 dB TYP. @VCE = 1 V, IC = 1 mA, f = 1.0 GHz

•

Small Package

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Collector to Base Voltage

VCBO

15

V

Collector to Emitter Voltage

VCEO

8V

Emitter to Base Voltage

VEBO

2V

Collector Current

IC

5mA

Total Power Dissipation

PT

50

mW

Junction Temperature

Tj

150

˚C

Storage Temperature

Tstg

–65 to +150

˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

Characteristic

Symbol

MIN.

TYP.

MAX.

Unit

Test Conditions

Collector Cutoff Current

ICBO

0.1

µAVCB = 5 V, IE = 0

Emitter Cutoff Current

IEBO

0.1

µAVEB = 1 V, IC = 0

DC Current Gain

hFE

50

100

250

VCE = 1 V, IC = 250

µA, pulsed

Gain Bandwidth Product

fT

4.0

GHz

VCE = 1 V, IC = 1 mA, f = 1 GHz

Feedback Capacitance

Cre

0.5

0.7

pF

VCB = 1 V, IE = 0, f = 1 MHz

Insertion Power Gain

|S21e|2

4.0

6.5

dB

VCE = 1 V, IE = 1 mA, f = 1 GHz

Noise Figure

NF

3.0

4.5

dB

VCE = 1 V, IC = 250

µA, f = 1 GHz

hFE Classification

Class

R6A

R6B

R6C

Marking

R6A

R6B

R6C

hFE

50 to 100

80 to 160

125 to 250

PRECAUTION

Avoid high static voltages or electric fields so that this device would not suffer any damage due to those voltages or fields.

PACKAGE DIMENSIONS

in millimeters

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

SUPER MINI MOLD

2.1 ±0.1

1.25 ±0.1

2

1

3

Marking

1. Emitter

2. Base

3. Collector

Document No. P10370EJ3V0DS00 (3rd edition)

Date Published February 1996 P

Printed in Japan