2SC3817 datasheet(3/6 Pages) RENESAS

3 / 6 page

Document No. P11699EJ1V1DS00 (1st edition)

Date Published July 1996 P

Printed in Japan

SILICON POWER TRANSISTOR

2SC3817

FEATURES

• High efficiency, high power output and excellent linearity

obtainable at 1500-MHz band

Pout = 1.0 W, Gain = 8.0 dB TYP.

@ VCC = 13.5 V, Iq = 5 mA, class AB

• Internal emitter balance resistor

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

NPN SILICON EPITAXIAL TRANSISTOR

FOR 1500-MHz BAND POWER AMPLIFIER

INDUSTRIAL USE

PACKAGE DIMENSIONS (in millimeters)

± 0.2

3.6

± 0.5

12.4

± 0.2

9.2

± 0.2

4.6

± 0.2

12 3

65 4

3.6

± 0.5

2 - 2

φ 3.2 ± 0.3

± 0.2

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

2.5

Collector Current

0.5

Thermal Resistance (junction to case)

Rth (j-c)

°C/W

Total Power Dissipation

PT (TC = 25 °C)

8.3

Junction Temperature

200

°C

Storage Temperature

Tstg

-65 to +150

°C

1996

DATA SHEET

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB = 20 V, IE = 0

0.1

Emitter Cut-off Current

IEBO

VEB = 1.5 V, IC = 0

0.1

DC Current Gain

hFE

VCE = 10 V, IC = 0.1 A (pulse)

200

Output Capacitance

Cob

Note

VCB = 10 V, IE = 0, f = 1 MHz

Output Power

Pout

VCC = 13.5 V, Iq = 3 mA

29.4

dBm

f = 1 550 MHz

0.87

1.0

Collector Efficiency

Pin = 22 dBm (0.16 W)

Note Emitter and case are grounded

PIN CONNECTIONS

1. Emitter

4. Emitter

2. Base

5. Collector

3. Emitter

6. Emitter

Flange is connected to the emitter

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