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SILICON TRANSISTOR

2SC3736

HIGH SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DATA SHEET

Document No. D17148EJ3V0DS00 (3rd edition)

(Previous No. TC-1891A)

Date Published May 2004 NS CP(K)

Printed in Japan

1987

The mark

shows major revised points.

DESCRIPTION

The 2SC3736 is designed for power amplifier and high speed

switching applications.

FEATURES

• High speed, high voltage switching

• Low collector saturation voltage

• Complementary to the 2SA1460 PNP transistor.

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

80

V

Collector to Emitter Voltage

VCEO

45

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC(DC)

1.0

A

Collector Current (pulse)

Note1

IC(pulse)

2.0

A

Total Power Dissipation

Note2

PT

2.0

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. Mounted on ceramic substrate of 16 cm

2 x 0.7 mm

PACKAGE DRAWING (Unit: mm)

1.6 ±0.2

1.5 ±0.1

3.0 TYP.

1.5 TYP.

4.5 ±0.1

0.41

+0.03

–0.05

0.47

±0.06

0.42

±0.06

0.42

±0.06

13

2

1: Emitter

2: Collecter (Fin)

3: Base