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SILICON TRANSISTOR

2SC1623A

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

DATA SHEET

Document No. D17841EJ2V0DS00 (2nd edition)

Date Published November 2005 NS CP(K)

Printed in Japan

c

2005

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• High DC Current Gain:

hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA)

• High Voltage: VCEO = 50 V

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current (DC)

IC

100

mA

Total Power Dissipation

PT

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

−55 to +150

°C

ELECTRICAL CHARACTERISTICS (TA = 25

°C)

CHARACTERISTIC

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Collector Cut-off Current

ICBO

0.1

μA

VCB = 60 V, IE = 0 A

Emitter Cut-off Current

IEBO

0.1

μA

VEB = 5.0 V, IC = 0 A

DC Current Gain

hFE

90

200

600

VCE = 6.0 V, IC = 1.0 mA

Note

Collector Saturation Voltage

VCE(sat)

0.15

0.3

V

IC = 100 mA, IB = 10 mA

Note

Base to Saturation Voltage

VBE(sat)

0.86

1.0

V

IC = 100 mA, IB = 10 mA

Note

Base to Emitter voltage

VBE

0.55

0.62

0.65

V

VCE = 6.0 V, IC = 1.0 mA

Note

Gain Bandwidth Product

fT

250

MHz

VCE = 6.0 V, IE =

−10 mA

Output Capacitance

Cob

3.0

pF

VCB = 6.0 V, IE = 0 A, f = 1.0 MHz

Note Pulsed: PW

≤ 350

μs, Duty Cycle ≤ 2%

hFE CLASSIFICATION

Marking

L4

L5

L6

L7

hFE

90 to 180

135 to 270

200 to 400

300 to 600

PACKAGE DRAWING (Unit: mm)

1: Emitter

2: Base

3: Collector