IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH 80N10

IXFT 80N10

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 10 V; I

35

55

S

C

iss

4800

pF

C

oss

V

GS

= 0 V, V

1460

pF

C

rss

490

pF

t

d(on)

41

n s

t

r

V

GS

= 10 V, V

63

n s

t

d(off)

R

90

n s

t

f

26

n s

Q

g(on)

180

nC

Q

gs

V

GS

= 10 V, V

38

nC

Q

gd

65

nC

R

thJC

0.42

K/W

R

thCK

(TO-247)

0.25

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

GS

= 0 V

80

A

I

SM

Repetitive; pulse width limited by T

JM

320

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

200

n s

Q

RM

I

0.5

µC

I

RM

6A

TO-268 Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80

21.46

.819

.845

E

15.75

16.26

.610

.640

e

5.20

5.72

0.205

0.225

L

19.81

20.32

.780

.800

L1

4.50

.177

∅P3.55

3.65

.140

.144

Q

5.89

6.40

0.232

0.252

R

4.32

5.49

.170

.216

S

6.15

BSC

242

BSC

Terminals:

1 - Gate

2 - Drain

3 - Source

Tab - Drain

1

2

3

TO-247 AD (IXFH) Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

Tab - Drain