STP10NK80Z, STP10NK80ZFP, STW10NK80Z

Electrical characteristics

Doc ID 8911 Rev 7

5/17

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on delay time

Rise time

VDD=400 V, ID=4.5A,

RG=4.7Ω, VGS=10V

See Figure 21

30

20

ns

ns

td(off)

tf

Turn-off delay Time

Fall time

VDD=400 V, ID=4.5A,

RG=4.7Ω, VGS=10V

See Figure 21

65

17

ns

ns

Table 8.

Gate-source zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

BVGSO

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Gate-source breakdown voltage

Igs=±1mA

(open drain)

30V

Table 9.

Source drain diode

Symbol

Parameter

Test conditions

Min

Typ.

Max

Unit

ISD

Source-drain current

-

9

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

36A

VSD

(2)

2.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward on voltage

ISD=9A, VGS=0

-1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=9A,

di/dt = 100A/µs,

VDD=45V, Tj=150°C

-

645

6.4

20

ns

µC

A