GP7NC60H datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STGP7NC60H

4/14

DocID10855 Rev 3

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 1 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 7 A

1.85

2.5

VGE = 15 V, IC = 7 A,

TJ = 125 °C

1.7

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 250 µA

3.75

5.75

ICES

Collector cut-off current

VGE = 0 V, VCE = 600 V

µA

VGE = 0 V, VCE = 600 V,

TC=125 °C (1)

IGES

Gate-emitter leakage

current

VCE = 0 V, VGE = ±20 V

±100

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward

transconductance

VCE= 15 V, IC = 7 A

4.30

Cies

Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

720

Coes

Output capacitance

Cres

Reverse transfer

capacitance

Total gate charge

VCE = 390 V, IC = 7 A, VGE = 15 V

(see Figure 18: "Gate charge test

circuit")

Qge

Gate-emitter charge

Qgc

Gate-collector charge

ICL

Turn-off SOA

minimum current

Vclamp = 480 V, Tj = 150 °C,

= 10 Ω, VGE = 15 V

Notes:

(1)Pulsed: Pulse duration= 300 μs, duty cycle 1.5%

Obsolete

Product(s)

- Obsolete

Product(s)

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