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V4082V2ST3B bảng dữ liệu(PDF) 2 Page - EM Microelectronic - MARIN SA |
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V4082V2ST3B bảng dữ liệu(HTML) 2 Page - EM Microelectronic - MARIN SA |
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2 / 7 page ![]() V4082 Copyright © 2004, EM Microelectronic-Marin SA 2 www.emmicroelectronic.com Absolute Maximum Ratings Parameter Symbol Conditions Voltage on Data Pin vs VSS VDATA -0.5 to 7.0V Max. injected current into DATA pin Idata -20 to +20 mA Storage Temperature TSTD -55 to +125 °C Power Dissipation Pw 10 mW Table 1 Stresses above these listed maximum ratings may cause permanent damages to the device. Exposure beyond specified operating conditions may affect device reliability or cause malfunction. Handling Procedures This device has built-in protection against high static voltages or electric fields; however, anti-static precautions must be taken as for any other CMOS component. Unless otherwise specified, proper operation can only occur when all terminal voltages are kept within the voltage range. Unused inputs must always be tied to a defined logic voltage level. Operating Conditions Parameter Symbol Min Typ Max Unit External pull up voltage VCC 4.5 5.0 5.5 V External pull up resistance RPUP 5 kΩ External capacitance Cext 800 pF Operating temperature TA -40 25 +85 °C Table 2 Electrical Characteristics Unless otherwise specified: All voltages are referenced to VSS, VDD= 5.0V, TA=-40 to +85°C. Parameter Symbol Test Conditions Min Typ Max Unit DC Characteristics Data Input Logic Low Data Input Logic High Sink Current Output Logic Low Output Logic High Input Resistance Operating Charge (after supply diode) Current consumption VIL VIH IL VOL VOH RIN COP Idata VOUT = 0.4V I = 4mA Modulator FET off Modulator FET on, 72 time slots Modulator FET off -0.2 2.2 4.0 1.2 0.4 VCC 0.4 VCC* 30 16 V V mA V V MΩ nC μA * Depends on resistive divider RIN / (RPUP+RIN) Table 3 Timing Characteristics Unless otherwise specified: VDD= 5.0V ±10%, TA=-40 to +85°C cf. remarks under "Effect of Cext" Parameter Symbol Test Conditions Min Typ Max Unit Time Slot Period TSLOT 60 120 μs Write 1 Low Time TLOW1 1 15 μs Write 0 Low Time TLOW0 60 120 μs Read Data Valid TRDV 15 μs Read Data Setup TSU 1 μs Frame Sync TSYC 1 μs Reset Low Time TRSTL 480 μs Reset High Time TRSTH 480 μs Presence Detect High TPDH 5 50 μs Presence Detect Low TPDL 60 240 μs Table 4 |
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