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74HC132DB bảng dữ liệu(PDF) 2 Page - NXP Semiconductors

tên linh kiện 74HC132DB
Giải thích chi tiết về linh kiện  Quad 2-input NAND Schmitt trigger
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74HC132DB bảng dữ liệu(HTML) 2 Page - NXP Semiconductors

  74HC132DB Datasheet HTML 1Page - NXP Semiconductors 74HC132DB Datasheet HTML 2Page - NXP Semiconductors 74HC132DB Datasheet HTML 3Page - NXP Semiconductors 74HC132DB Datasheet HTML 4Page - NXP Semiconductors 74HC132DB Datasheet HTML 5Page - NXP Semiconductors 74HC132DB Datasheet HTML 6Page - NXP Semiconductors 74HC132DB Datasheet HTML 7Page - NXP Semiconductors 74HC132DB Datasheet HTML 8Page - NXP Semiconductors  
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September 1993
2
Philips Semiconductors
Product specification
Quad 2-input NAND Schmitt trigger
74HC/HCT132
FEATURES
• Output capability: standard
• ICC category: SSI
GENERAL DESCRIPTION
The 74HC/HCT132 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT132 contain four 2-input NAND gates which accept standard input signals. They are capable of
transforming slowly changing input signals into sharply defined, jitter-free output signals.
The gate switches at different points for positive and negative-going signals. The difference between the positive voltage
VT+ and the negative voltage VT− is defined as the hysteresis voltage VH.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf = 6 ns
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW):
PD =CPD × VCC2 × fi +∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
∑ (CL × VCC2 × fo) = sum of outputs
CL = output load capacitance in pF
VCC = supply voltage in V
2. For HC the condition is VI = GND to VCC
For HCT the condition is VI = GND to VCC − 1.5 V
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information”.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC
HCT
tPHL/ tPLH
propagation delay nA, nB to nY
CL = 15 pF; VCC =5 V 11
17
ns
CI
input capacitance
3.5
3.5
pF
CPD
power dissipation capacitance per gate
notes 1 and 2
24
20
pF



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