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STP3NK80Z bảng dữ liệu(PDF) 3 Page - STMicroelectronics

tên linh kiện STP3NK80Z
Giải thích chi tiết về linh kiện  N-channel 800 V, 3.8 Ω typ., 2.5 A SuperMESH™ Power MOSFETs in IPAK, DPAK, TO-220FP, TO-220 packages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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STP3NK80Z bảng dữ liệu(HTML) 3 Page - STMicroelectronics

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STD3NK80Z-1, STD3NK80ZT4, STF3NK80Z,
STP3NK80Z
Electrical ratings
DocID9565 Rev 7
3/29
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220,
DPAK,
IPAK
TO-220FP
VDS
Drain-source voltage
800
V
VGS
Gate-source voltage
±30
V
ID
Drain current (continuous) at TC = 25 °C
2.5
2.5(1)
A
Drain current (continuous) at TC = 100 °C
1.57
1.57(1)
A
IDM(2)
Drain current (pulsed)
10
10(1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
ESD
Gate-source, human body model,
R = 1.5 kΩ, C = 100 pF
2
kV
dv/dt(3)
Peak diode recovery voltage slope
4.5
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t = 1 s, TC = 25 °C)
2.5
kV
Tstg
Storage temperature range
-55 to 150
°C
Tj
Operation junction temperature range
Notes:
(1)This value is limited by package.
(2)Pulse width is limited by safe operating area.
(3)ISD ≤ 2.5 A, di/dt ≤ 200 A/μs, VDS(peak) < V(BR)DSS, VDD = 640 V
Table 3: Thermal data
Symbol
Parameter
Value
Unit
TO-220
TO-220FP
DPAK
IPAK
Rthj-case
Thermal resistance junction-case
1.78
5
1.78
°C/W
Rthj-amb
Thermal resistance junction-ambient
62.5
100
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
50
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or non-repetitive
(pulse width limited by TJ max)
2.5
A
EAS
Single pulse avalanche energy (starting TJ =25 °C, ID = IAR, VDD= 50 V)
170
mJ



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