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CTN635 bảng dữ liệu(PDF) 2 Page - Continental Device India Limited

tên linh kiện CTN635
Giải thích chi tiết về linh kiện  Complementary Transistors in Plastic Package for Driver Stage of Audio Amplifier
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nhà sản xuất  CDIL [Continental Device India Limited]
Trang chủ  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

CTN635 bảng dữ liệu(HTML) 2 Page - Continental Device India Limited

  CTN635 Datasheet HTML 1Page - Continental Device India Limited CTN635 Datasheet HTML 2Page - Continental Device India Limited CTN635 Datasheet HTML 3Page - Continental Device India Limited CTN635 Datasheet HTML 4Page - Continental Device India Limited  
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Continental Device India Limited
Data Sheet
Page 2 of 4
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (Ta =25ºC unless otherwise specified)
Characteristic
Characteristic
Characteristic
Characteristic
Characteristic
Symbol
Symbol
Symbol
Symbol
Symbol
Min.
Min.
Min.
Min.
Min.
Typ.
Typ.
Typ.
Typ.
Typ.
Max.
Max.
Max.
Max.
Max. Unit
Unit
Unit
Unit
Unit
Collector-Emitter Voltage 635, 636
635, 636
635, 636
635, 636
635, 636
BVCEO
45
-
-
V
IC=10mA, IB=0
637, 638
637, 638
637, 638
637, 638
637, 638
60
-
-
V
639, 640
639, 640
639, 640
639, 640
639, 640
80
-
-
V
Collector-Base Voltage
635, 636
635, 636
635, 636
635, 636
635, 636
BVCBO
45
-
-
V
IC=100µA, IE=0
637, 638
637, 638
637, 638
637, 638
637, 638
60
-
-
V
639, 640
639, 640
639, 640
639, 640
639, 640
100
-
-
V
Emitter-Base Voltage
IE=10µA, IC=0
BVEBO
5-
-
V
Collector Cutoff Current
VCB=30V, IE=0
ICBO
-
-
100
nA
VCB=30V, IE=0, Ta=125°C
-
10
µA
Base Emitter On Voltage
IC=500mA, VCE=2V
VBE(on)*
-
-
1.0 V
Collector-Emitter
(Sat) Voltage
IC=500mA, IB=50mA
VCE(sat)*
-
-
0.5 V
D.C. Current Gain
IC=5mA, VCE=2V
635, 636
635, 636
635, 636
635, 636
635, 636
hFE
25
-
-
IC=150mA, VCE=2V* 637, 638
637, 638
637, 638
637, 638
637, 638
40
-
160
639, 640
639, 640
639, 640
639, 640
639, 640
40
-
160
IC=500mA, VCE=2V*
25
-
-
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Input Capacitance
VBE=0.5V, IC=0,
NPN
NPN
NPN
NPN
NPN
Cib
-50
-
pF
f=1MHz
PNP
PNP
PNP
PNP
PNP
-
110
-
pF
Input Capacitance
VCB=10V, IC=0,
NPN
NPN
NPN
NPN
NPN
Cob
-7
-
pF
f=1MHz
PNP
PNP
PNP
PNP
PNP
-9
-
pF
Transition Frequency
IC=10mA, VCE=5V,
NPN
NPN
NPN
NPN
NPN
fT
-
130
-
MHz
f=35MHz
PNP
PNP
PNP
PNP
PNP
-
50
-
MHz
* Pulse Test: Pulse width
≤ 300µs, Duty cycle ≤ 2%.
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640



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