INCHANGE Semiconductor

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2023-02-13

2

isc Silicon NPN Darlington Power Transistor

MJ10005

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 10mA, IB= 0

400

-

V

VCE(sat)1

Collector-Emitter Saturation Voltage

IC= 10A ,IB= 400mA

-

1.9

V

VCE(sat)2

Collector-Emitter Saturation Voltage

IC= 20A ,IB= 2.0A

-

3.0

V

VBE(sat)1

Base-Emitter Saturation Voltage

IC= 10A ,IB= 400mA

-

2.5

V

VBE(sat)2

Base-Emitter Saturation Voltage

IC= 10A ,IB= 400mA;Tc=100℃

-

2.5

V

ICEO

Collector Cutoff Current

VCE=400V, IE= 0

-

5

mA

ICBO

Collector Cutoff Current

VCB= 400V, IB= 0

-

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 2V; IC= 0

-

175

mA

hFE-1

DC Current Gain

IC= 5A ; VCE= 5V

300

2000

-

hFE-2

DC Current Gain

IC= 10A ; VCE=5V

100

-

-

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not designed

for use in equipment which require specialized quality and/or reliability, or in equipment which

could have applications in hazardous environments, aerospace industry, or medical field. Please

contact us if you intend our products to be used in these special applications.

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incidental damages.