TSOP181.., TSOP183.., TSOP185..

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Vishay Semiconductors

Rev. 1.7, 13-Apr-2022

2

Document Number: 82802

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

• 30 kHz and 33 kHz only available on written request

Note

• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability

PARTS TABLE

AGC

BASIC NOISE SUPPRESSION

(AGC1)

ENHANCED NOISE

SUPPRESSION (AGC3)

MAXIMIZED NOISE

SUPPRESSION (AGC5)

Carrier

frequency

30 kHz

TSOP18130

TSOP18330

TSOP18530

33 kHz

TSOP18133

TSOP18333

TSOP18533

36 kHz

TSOP18136

TSOP18336 (1)

TSOP18536

38 kHz

TSOP18138

TSOP18338 (2)(4)

TSOP18538

40 kHz

TSOP18140

TSOP18340

TSOP18540

56 kHz

TSOP18156

TSOP18356 (3)

TSOP18556

Package

Minicast

Pinning

1 = OUT, 2 = GND, 3 = VS

Dimensions (mm)

5.0 W x 6.95 H x 4.8 D

Mounting

Leaded

Application

Remote control

Best choice for

(1) RCMM (2) RECS-80 Code (3) r-map (4) XMP-1, XMP-2

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Supply voltage

VS

-0.3 to +6

V

Supply current

IS

3mA

Output voltage

VO

-0.3 to (VS + 0.3)

V

Output current

IO

5mA

Junction temperature

Tj

100

°C

Storage temperature range

Tstg

-25 to +85

°C

Operating temperature range

Tamb

-25 to +85

°C

Power consumption

Tamb

≤ 85 °C

Ptot

10

mW

Soldering temperature

t

≤ 10 s, 1 mm from case

Tsd

260

°C

ELECTRICAL AND OPTICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Supply current

Ev = 0, VS = 3.3 V

ISD

0.55

0.7

0.9

mA

Ev = 40 klx, sunlight

ISH

-0.8

-

mA

Supply voltage

VS

2.5

-

5.5

V

Transmission distance

Ev = 0, test signal see Fig. 1,

IR diode TSAL6200, IF = 50 mA

d-

24

-

m

Output voltage low

IOSL = 0.5 mA, Ee = 0.7 mW/m2,

test signal see Fig. 1

VOSL

-

-

100

mV

Minimum irradiance

Pulse width tolerance:

tpi - 3.0/f0 < tpo < tpi + 3.5/f0, test

signal see Fig. 1

Ee min.

-

0.12

0.25

mW/m2

Maximum irradiance

tpi - 3.0/f0 < tpo < tpi + 3.5/f0, test

signal see Fig. 1

Ee max.

30

-

-

W/m2

Maximum long burst irradiance

(AGC3, AGC5)

tpi - 3.0/fo < tpo < tpi + 3.5/fo, test

signal see Fig. 1, dark ambient,

burst length > 30 cycles

Ee max.

0.5

-

-

W/m2

Directivity

Angle of half transmission

distance

ϕ1/2

-± 45

-

°