STGF3NC120HD datasheet(3/11 Pages) STMICROELECTRONICS

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STGF3NC120HD

ELECTRICAL CHARACTERISTICS (CONTINUED)

Table 6: Dynamic

(1) Pulsed: Pulse duration= 300 µs, duty cycle 1.5%

Table 7: Switching On

Table 8: Switching Off

Table 9: Switching Energy

(2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack

diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25°C and 125°C)

(3) Turn-off losses include also the tail of the collector current.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VCE = 25 V , IC = 3 A

Cies

Input Capacitance

VCE = 25 V, f= 1 MHz, VGE = 0

470

Coes

Output Capacitance

Cres

Reverse Transfer

Capacitance

6pF

Qge

Qgc

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCC = 960 V, IC = 3 A,

VGE = 15 V

(see Figure 22)

ICL

Turn-off SOA minimum

current

Vclamp = 960 V , Tj = 150°C

RG = 10 Ω, VGE = 15 V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

(di/dt)on

Turn-on Delay Time

Current Rise Time

Turn-on Current Slope

VCC = 800 V, IC = 3 A

RG=10 Ω, VGE= 15V, Tj= 25°C

(see Figure 20)

3.5

880

A/µs

td(on)

(di/dt)on

Turn-on Delay Time

Current Rise Time

Turn-on Current Slope

VCC = 480 V, IC = 3 A

RG=10 Ω, VGE= 15V, Tj= 125°C

(see Figure 20)

14.5

770

A/µs

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off Voltage Rise Time

Vcc = 800 V, IC = 3 A,

RG = 10 Ω , VGE = 15 V

TJ = 25 °C

(see Figure 20)

td(off)

Turn-off Delay Time

118

Current Fall Time

250

tr(Voff)

Off Voltage Rise Time

Vcc = 800 V, IC = 3 A,

RG = 10 Ω , VGE = 15 V

Tj = 125 °C

(see Figure 20)

132

td(off)

Turn-off Delay Time

210

Current Fall Time

470

Symbol

Parameterr

Test Conditions

Min.

Typ.

Max

Unit

Eon (2)

Eoff (3)

Ets

Turn-on Switching Losses

Turn-off Switching Loss

Total Switching Loss

VCC = 800 V, IC = 3 A

RG= 10 Ω, VGE= 15V, Tj= 25°C

(see Figure 21)

236

290

526

µJ

Eon (2)

Eoff (3)

Ets

Turn-on Switching Losses

Turn-off Switching Loss

Total Switching Loss

VCC = 800 V, IC = 3 A

RG= 10 Ω, VGE= 15V, Tj= 125°C

(see Figure 21)

360

620

980

µJ

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