IXRH50N80 datasheet(1/2 Pages) IXYS

tên linh kiện	IXRH50N80

Giải thích chi tiết về linh kiện	IGBT with Reverse Blocking capability

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nhà sản xuất	IXYS [IXYS Corporation]

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V

CES

= 600 / 800V

I

C25

= 60 A

V

CE(sat) =

2.5 V

t

f

= 75 ns

IXYS reserves the right to change limits, test conditions and dimensions.

Advanced Technical Information

Features

q

IGBT with NPT (non punch through)

structure

q

reverse blocking capability indepen-

dent from gate voltage

- function of series diode monolithically

integrated

- no external series diode required

- soft reverse recovery

q

positive temperature coefficient of

saturation voltage

- optimum current distribution

when paralleled

q

Epoxy of TO 247 package meets

UL 94V-0

Applications

converters requiring reverse blocking

capability:

- current source inverters

- matrix converters

- bi-directional switches

- resonant converters

- induction heating

- auxiliary switches for soft switching

in the main current path

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

VJ = 25°C to 150°C

IXRH 50N80

±800

V

IXRH 50N60

±600

V

GES

± 20

V

I

C25

T

C =

25°C

60

A

I

C90

T

C =

90°C

40

A

I

CM

V

GE = 0/15 V; RG = 22 Ω; TVJ = 125°C

80

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

500

V

P

tot

T

C = 25°C

300

W

Symbol

Conditions

Characteristic Values

(T

VJ = 25°C, unless otherwise specified)

min.

typ.

max.

V

CE(sat)

I

C = 40 A; VGE = 15 V; TVJ =

25°C

2.5

3.1

V

T

VJ = 125°C

3.0

V

GE(th)

I

C = 2 mA; VGE = VCE

48

V

I

CES

V

CE = 0.8 VCES; VGE = 0 V; TVJ =

25°C

0.4

mA

T

VJ = 125°C

3.0

mA

I

GES

V

CE = 0 V; VGE = ± 20 V

500

nA

t

d(on)

80

ns

t

r

100

ns

t

d(off)

380

ns

t

f

75

ns

E

on

3.6

mJ

E

off

2.1

mJ

C

ies

V

CE = 25 V; VGE = 0 V; f = 1 MHz

4

nF

Q

Gon

V

CE = 500V; VGE = 15 V; IC = 40 A

150

nC

I

RM

I

F = 40 A; diC/dt = -400 A/µs; TVJ = 125°C

58

A

t

rr

V

CE = -500 V; VGE = 15 V

840

ns

R

thJC

0.42 K/W

Inductive load, T

VJ = 125°C

V

CE = 500 V; IC = 40 A

V

GE = 0/15 V; RG = 22 Ω

TO-247 AD

G

C

E

G = Gate,

C = Collector,

E = Emitter,

TAB = Collector

C (TAB)

C

E

G

IGBT with Reverse

Blocking capability

IXRH 50N80

IXRH 50N60

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

Số phần tương tự - IXRH50N80

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Mô tả tương tự - IXRH50N80

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