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RadHard MSI Logic
148
UT54ACTS220
RADIATION HARDNESS SPECIFICATIONS
Notes:
1. Device storage elements are immune to SEU affects.
2. Not tested, inherent of CMOS technology.
ABSOLUTE MAXIMUM RATINGS
Note:
1.Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
LIMIT
UNITS
Total Dose
1.0E6
rad(Si)
SEU Threshold 1
80
MeV-cm2/mg
SEL Threshold
>120
MeV-cm2/mg
Neutron Fluence2
1.0E14
n/cm2
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
-0.3 to 7.0
V
VI/O
Voltage any pin
-0.3 to VDD +0.3
V
TSTG
Storage Temperature range
-65 to +150
°C
TJ
Maximum junction temperature
+175
°C
TLS
Lead temperature (soldering 5 seconds)
+300
°C
Θ
JC
Thermal resistance junction to case
20
°C/W
II
DC input current
±10
mA
PD
Maximum power dissipation
1
W
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
Supply voltage
4.5 to 5.5
V
VIN
Input voltage any pin
0 to VDD
V
TC
Temperature range
-55 to + 125
°C
48MHz
Duty Cycle
50
± 20%
MHz
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