BSC072N025S datasheet(2/10 Pages) INFINEON

tên linh kiện	BSC072N025S

Giải thích chi tiết về linh kiện	OptiMOS짰2 Power-Transistor

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nhà sản xuất	INFINEON [Infineon Technologies AG]

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BSC072N025S G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance, junction - case

R thJC

2.1

K/W

Thermal resistance,

R thJA

minimal footprint

junction - ambient

6 cm

2 cooling area2)

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

Gate threshold voltage

V GS(th)

V DS=V GS, I D=30 µA

1.2

1.6

Zero gate voltage drain current

I DSS

V DS=25 V, V GS=0 V,

T j=25 °C

0.1

µA

V DS=25 V, V GS=0 V,

T j=125 °C

100

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

100

Drain-source on-state resistance

R DS(on)

V GS=4.5 V, I D=30 A

8.7

10.9

Ω

V GS=10 V, I D=40 A

6.0

7.2

Gate resistance

R G

1.2

Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=40 A

3) See figure 3

1)J-STD20 and JESD22

Values

2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 0.94

page 2

2006-05-10

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