2PD601AR datasheet(3/8 Pages) PHILIPS

tên linh kiện	2PD601AR

Giải thích chi tiết về linh kiện	NPN general purpose transistor

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nhà sản xuất	PHILIPS [NXP Semiconductors]

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1999 Apr 23

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

2PD601A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

IE = 0; VCB =60V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

IC = 100 mA; VCE = 2 V; note 1

−

DC current gain

IC = 2 mA; VCE = 10 V; note 1

2PD601AQ

160

260

2PD601AR

210

340

2PD601AS

290

460

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 10 mA; note 1

−

500

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

3.5

transition frequency

IC = 2 mA; VCE =10V;

f = 100 MHz

2PD601AQ

100

−

MHz

2PD601AR

120

−

MHz

2PD601AS

140

−

MHz

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