CMBT4126 datasheet(2/3 Pages) CDIL

2 / 3 page

Continental Device India Limited

Data Sheet

Page 2 of 3

Total power dissipation at Tamb = 25°C

Ptot

max

350 mW

Storage temperature

Tstg

–55 to +150 ° C

Junction temperature

max.

150 ° C

THERMAL CHARACTERISTICS

Tj = P (Rth j–t + Rth s–a) + Tamb

Thermal resistance

from junction to ambient

Rth j–a

556 °C/mW

CHARACTERISTICS (at TA = 25°C unless otherwise specified)

Collector–emitter breakdown voltage

–IC = 1 mA; IB = 0

–V(BR)CEO min.

25 V

Collector–base breakdown voltage

–IC = 10 µA; IE = 0

–V(BR)CBO min.

25 V

Emitter–base breakdown voltage

–IE = 10 µA; IC = 0

–V(BR)EBO min.

4 V

Collector cut–off current

–VCB = 20 V; IE = 0 V

–ICBO

max.

50 nA

Emitter cut–off current

VBE = 3 V; IC =0

IEBO

max.

50 nA

Output capacitance at f = 1 MHz

IE = 0; –VCB = 5 V

max.

4.5 pF

Input capacitance at f = 1 MHz

IC = 0; –VBE = 0.5 V

max.

10 pF

Saturation voltages

–VCEsat

max.

0.4 V

–IC = 50 mA; –IB = 5 mA

–VBEsat

max.

0.95 V

D.C. current gain

min.

120

–IC = 2 mA; –VCE = 1 V

hFE

max.

360

–IC = 50 mA; –VCE = 1 V

hFE

min.

Noise figure at RS = 1 kΩ

–IC = 100 µA; –VCE = 5 V

f = 10 Hz to 15.7 kHz

max.

4 dB

Small signal current gain

–VCE = 1V; –IC = 2 mA; f = 1 KHz

hfe

min.

120

max.

480

Transition frequency

–VCE = 20V; –IC = 10 mA; f = 100 MHz

min.

250 MHz

CMBT4126

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