TPH8R808QM

2

4. Absolute Maximum Ratings (Note) (Ta = 25 � unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (DC)

Drain current (pulsed)

Power dissipation

Power dissipation

Power dissipation

Single-pulse avalanche energy

Single-pulse avalanche current

Channel temperature

Storage temperature

(Tc = 25 �)

(Silicon limit)

(t = 100 µs)

(Tc = 25 �)

(Note 1)

(Note 1), (Note 2)

(Note 1)

(Note 3)

(Note 4)

(Note 5)

(Note 5)

Symbol

VDSS

VGSS

ID

ID

IDP

PD

PD

PD

EAS

IAS

Tch

Tstg

Rating

80

±20

52

79

200

109

3

0.96

33

52

175

-55 to 175

Unit

V

A

W

mJ

A

�

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note:

This product is not designed for radiation resistance or cosmic ray resistance, and these natural

environmentalfactors may affect reliability.

In addition, radiation from the constituent materials of the product also becomes a natural environmental factor,

which may affect reliability.

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Channel-to-ambient thermal resistance

(Tc = 25 �)

(Ta = 25 �)

(Ta = 25 �)

(Note 3)

(Note 4)

Symbol

Rth(ch-c)

Rth(ch-a)

Rth(ch-a)

Max

1.37

50

156

Unit

�/W

Note 1: Ensure that the channel temperature does not exceed 175 �.

Note 2: Limited by silicon chip capability.

Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 5: VDD = 64 V, Tch = 25 � (initial), L =9.6 µH, IAS =52 A

Fig. 5.1

Device Mounted on a Glass-Epoxy

Board (a)

Fig. 5.2

Device Mounted on a Glass-Epoxy

Board (b)

Note:

This transistor is sensitive to electrostatic discharge and should be handled with care.

2022-09-28

Rev.2.0

©2021-2022

Toshiba Electronic Devices & Storage Corporation