2N2905 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 May 28

Philips Semiconductors

Product speciﬁcation

PNP switching transistors

2N2905; 2N2905A

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

2N2905

IE = 0; VCB = −50 V

−−20

IE = 0; VCB = −50 V; Tamb = 150 °C

−−20

µA

ICBO

collector cut-off current

2N2905A

IE = 0; VCB = −50 V

−−10

IE = 0; VCB = −50 V; Tamb = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−

hFE

DC current gain

VCE = −10 V

2N2905

IC = −0.1 mA

−

IC = −1mA

−

IC = −10 mA

−

IC = −150 mA; note 1

100

300

IC = −500 mA; note 1

−

hFE

DC current gain

VCE = −10 V

2N2905A

IC = −0.1 mA

−

IC = −1 mA

100

−

IC = −10 mA

100

−

IC = −150 mA; note 1

100

300

IC = −500 mA; note 1

−

VCEsat

collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1

−−400 mV

IC = −500 mA; IB = −50 mA; note 1

−−1.6

VBEsat

base-emitter saturation voltage

IC = −150 mA; IB = −15 mA; note 1

−−1.3

IC = −500 mA; IB = −50 mA; note 1

−−2.6

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

8pF

emitter capacitance

IC =ic = 0; VEB = −2 V; f = 1 MHz

−

transition frequency

IC = −50 mA; VCE = −20 V; f = 100 MHz;

note 1

200

−

MHz

Switching times (between 10% and 90% levels); see Fig.2

ton

turn-on time

ICon = −150 mA; IBon = −15 mA; IBoff =15mA −

delay time

−

rise time

−

toff

turn-off time

−

300

storage time

−

250

fall time

−

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