IRHM9130 datasheet(1/8 Pages) IRF

tên linh kiện	IRHM9130

Giải thích chi tiết về linh kiện	RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL

PDF	8 Pages

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nhà sản xuất	IRF [International Rectifier]

Trang chủ	http://www.irf.com

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Absolute Maximum Ratings

Parameter

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-11

ID @ VGS = -12V, TC = 100°C Continuous Drain Current

-7.0

IDM

Pulsed Drain Current ➀

-44

PD @ TC = 25°C

Max. Power Dissipation

75

W

Linear Derating Factor

0.6

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

190

mJ

IAR

Avalanche Current ➀

-11

A

EAR

Repetitive Avalanche Energy ➀

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt ➂

-10

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 ( 0.063 in. (1.6mm) from case for 10s)

Weight

9.3 (typical)

g

PD - 90888C

Pre-Irradiation

International Rectifier’s RAD-Hard HEXFETTM technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

oC

A

02/18/03

www.irf.com

1

TO-254AA

Product Summary

Part Number Radiation Level

RDS(on)

ID

IRHM9130

100K Rads (Si)

0.3

Ω

-11A

IRHM93130

300K Rads (Si)

0.3

Ω

-11A

Features:

n Single Event Effect (SEE) Hardened

n Low RDS(on)

n LowTotal Gate Charge

n Proton Tolerant

n SimpleDriveRequirements

n Ease of Paralleling

n Hermetically Sealed

n Ceramic Package

n Light Weight

For footnotes refer to the last page

RADIATION HARDENED

IRHM9130

POWER MOSFET

100V, P-CHANNEL

THRU-HOLE (TO-254AA)

RAD-Hard

™ HEXFET

®

TECHNOLOGY

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
International Rectifier	IRHM9130	136Kb / 8P	Simple Drive Requirements
International Rectifier	IRHM9130	136Kb / 8P	Simple Drive Requirements

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