2N1613 datasheet(3/8 Pages) PHILIPS

tên linh kiện	2N1613

Giải thích chi tiết về linh kiện	NPN medium power transistor

PDF	8 Pages

Scroll/Zoom	100%

nhà sản xuất	PHILIPS [NXP Semiconductors]

Trang chủ	http://www.nxp.com

Logo

3 / 8 page

1997 Apr 11

Philips Semiconductors

Product speciﬁcation

NPN medium power transistor

2N1613

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. Refer to TO-39 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

500

ICM

peak collector current

−

IBM

peak base current

−

200

Ptot

total power dissipation

Tamb ≤ 25 °C

−

0.8

Tcase = 100 °C

−

1.7

Tcase ≤ 25 °C

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

218

K/W

Rth j-c

thermal resistance from junction to case

58.3

K/W

2N1613 bảng dữ liệu(PDF) 3 Page - NXP Semiconductors

2N1613 bảng dữ liệu(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL