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DMTH6010LPDQ bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

tên linh kiện DMTH6010LPDQ
Giải thích chi tiết về linh kiện  60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  9 Pages
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nhà sản xuất  DIODES [Diodes Incorporated]
Trang chủ  http://www.diodes.com
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DMTH6010LPDQ bảng dữ liệu(HTML) 2 Page - Diodes Incorporated

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DMTH6010LPDQ
Document number: DS38517 Rev. 4 - 2
2 of 9
www.diodes.com
December 2021
© Diodes Incorporated
DMTH6010LPDQ
Ordering Information (Note 4)
Part Number
Package
Packing
Qty.
Carrier
DMTH6010LPDQ-13
PowerDI5060-8 (Type C)
2,500
Tape & Reel
DMTH6010LPDQ-13
PowerDI5060-8/SWP (Type UXD)
2,500
Tape & Reel
Notes:
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 6)
TC = +25°C
TC = +100°C
ID
47.6
33.7
A
Continuous Drain Current (Note 5)
Steady
State
TA = +25°C
TA = +70°C
ID
13.1
10.9
A
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
IDM
170
A
Maximum Continuous Body Diode Forward Current (Note 6)
IS
31
A
Avalanche Current, L = 0.1mH
IAS
20
A
Avalanche Energy, L = 0.1mH
EAS
20
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
TA = +25°C
PD
2.8
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
53
°C/W
Total Power Dissipation (Note 6)
TC = +25°C
PD
37.5
W
Thermal Resistance, Junction to Case (Note 6)
RθJC
4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +175
°C
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
= Manufacturer’s Marking
H6010LD = Product Type Marking Code
YYWW or YYWW = Date Code Marking
YY or YY = Year (ex: 21 = 2021)
WW = Week (01 to 53)
S1
D1
G1
S2
G2
D1
D2
D2
H6010LD
YY WW



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