51

VTP Process Photodiodes

VTP1188S

PRODUCT DESCRIPTION

Large area planar silicon photodiode mounted

on a two lead ceramic substrate. A clear molded

lens is used to increase sensitivity. Low junction

capacitance permits fast response time.

CASE 12

LENSED CERAMIC

ABSOLUTE MAXIMUM RATINGS

Storage Temperature:

-20°C to 75°C

Operating Temperature:

-20°C to 75°C

SYMBOL

CHARACTERISTIC

TEST CONDITIONS

VTP11188S

UNITS

Min.

Typ.

Max.

Short Circuit Current

H = 100 fc, 2850 K

200

µA

2850 K

.20

%/°C

Short Circuit Current

13

25

µA

Open Circuit Voltage

H = 100 fc, 2850 K

.33

mV

2850 K

-2.0

mV/°C

Dark Current

H = 0, VR = 10 mV

3

30

nA

Shunt Resistance

H = 0, V = 10 mV

67

G

Ω

H = 0, V = 10 mV

-11

%/°C

Junction Capacitance

H = 0, V =0 V

.18

.30

nF

λ

range

Spectral Application Range

400

1100

nm

λ

p

Spectral Response - Peak

925

nm

Sensitivity

@ Peak

.55

A/W

PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA

Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto