APM4804K datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. B.2 - Mar., 2005

APM4804K

www.anpec.com.tw

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±16

ID*

Continue Drain Current

IDM*

300

µs Pulsed Drain Current

VGS=10V

IS*

Diode Continuous Forward Current

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Maximum Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

Electrical Characteristics (T

A = 25°C unless otherwise noted)

APM4804K

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

VDS=24V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

0.6

1.5

IGSS

Gate Leakage Current

VGS=±16V, VDS=0V

±100

VGS=10V, IDS=8A

RDS(ON)

Drain-Source On-state Resistance

VGS=4.5V, IDS=5.6A

Ω

VSD

Diode Forward Voltage

ISD=4A, VGS=0V

0.8

1.3

Dynamic Characteristics

Ciss

Input Capacitance

713

Coss

Output Capacitance

142

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=15V,

Frequency=1.0MHz

120

Gate Resistance

VGS=0V, VDS=0V, f=1MHz

1.5

Ω

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