APM4536K datasheet(2/13 Pages) ANPEC

2 / 13 page

Rev. B.1 - Mar., 2005

www.anpec.com.tw

APM4536K

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

N Channel

P Channel

Unit

VDSS

Drain-Source Voltage

-30

VGSS

Gate-Source Voltage

±16

ID*

Continuous Drain Current

-5

IDM*

Pulsed Drain Current

VGS=

±10V

-20

IS*

Diode Continuous Forward Current

1.7

-1.7

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM4536K

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

VGS=0V, IDS=250

µA

N-Ch

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V, IDS=-250

µA

P-Ch

-30

VDS=24V, VGS=0V

TJ=85°C

N-Ch

VDS=-24V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain

Current

TJ=85°C

P-Ch

-30

µA

VDS=VGS, IDS=250

µA

N-Ch

0.7

1.1

1.5

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

P-Ch

-1

-1.5

-2

N-Ch

±100

IGSS

Gate Leakage Current

VGS=±16V, VDS=0V

P-Ch

±100

VGS=10V, IDS=5A

N-Ch

VGS=-10V, IDS=-5A

P-Ch

VGS=4.5V, IDS=4A

N-Ch

RDS(ON)

Drain-Source On-State

Resistance

VGS=-4.5V, IDS=-4A

P-Ch

Ω

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