APM4430K datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. B.2 - Apr., 2005

www.anpec.com.tw

APM4430K

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±20

ID*

Continuous Drain Current

12.5

IDM*

300

µs Pulsed Drain Current

VGS=10V

IS*

Diode Continuous Forward Current

3.2

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

PD*

Maximum Power Dissipation

TA=100°C

0.8

RθJA*

Thermal Resistance-Junction to Ambient

62.5

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM4430K

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

VDS=24V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

1.5

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±100

VGS=10V, IDS=12.5A

4.5

RDS(ON)

Drain-Source On-state Resistance

VGS=5V, IDS=7A

Ω

VSD

Diode Forward Voltage

ISD=2.3A, VGS=0V

0.7

1.3

Dynamic Characteristics

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

1.7

Ω

Ciss

Input Capacitance

4720

Coss

Output Capacitance

815

Crss

Reverse Transfer Capacitance

VGS=0V,

VDS=25V,

Frequency=1.0MHz

240

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

102

148

Turn-off Fall Time

VDD=15V, RL=15

Ω,

IDS=1A, VGEN=10V,

RG=6

Ω,

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