APM3040ND datasheet(2/10 Pages) ANPEC

2 / 10 page

Rev. B.1 - Mar., 2005

APM3040ND

www.anpec.com.tw

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Symbol

Parameter

Rating

Unit

VDSS

Drain-Source Voltage

VGSS

Gate-Source Voltage

±12

ID*

Continuous Drain Current

IDM*

300

µs Pulsed Drain Current

VGS=10V

IS*

Diode Continuous Forward Current

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

1.47

PD*

Power Dissipation for Single Operation

TA=100°C

0.58

RθJA*

Thermal Resistance-Junction to Ambient

°C/W

Note:

*Surface Mounted on 1in

2 pad area, t

≤ 10sec.

APM3040ND

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250

µA

VDS=24V, VGS=0V

IDSS

Zero Gate Voltage Drain Current

TJ=85°C

µA

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250

µA

0.6

0.75

1.5

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

±100

VGS=10V, IDS=3A

VGS=4.5V, IDS=1.5A

RDS(ON)

Drain-Source On-state Resistance

VGS=2.5V, IDS=0.5A

Ω

VSD

Diode Forward Voltage

ISD=0.5A , VGS=0V

0.7

1.3

Gate Charge Characteristics

Total Gate Charge

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

VDS=15V, VGS=10V,

IDS=3A

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