APTM120A20D datasheet(1/6 Pages) ADPOW

tên linh kiện	APTM120A20D

Giải thích chi tiết về linh kiện	Phase leg with Series diodes MOSFET Power Module

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APTM120A20D

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OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Symbol

Parameter

Max ratings

Unit

VDSS

Drain - Source Breakdown Voltage

1200

V

Tc = 25°C

50

ID

Continuous Drain Current

Tc = 80°C

37

IDM

Pulsed Drain current

200

A

VGS

Gate - Source Voltage

±30

V

RDSon

Drain - Source ON Resistance

200

m

Ω

PD

Maximum Power Dissipation

Tc = 25°C

1250

W

IAR

Avalanche current (repetitive and non repetitive)

12

A

EAR

Repetitive Avalanche Energy

30

EAS

Single Pulse Avalanche Energy

1300

mJ

VDSS = 1200V

RDSon = 200mΩ max @ Tj = 25°C

ID = 50A @ Tc = 25°C

Application

•

Zero Current Switching resonant mode

Features

•

Power MOS 7® MOSFETs

-

Low RDSon

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

Phase leg

with Series diodes

MOSFET Power Module

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