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APTC60HM70T3 bảng dữ liệu(PDF) 1 Page - Advanced Power Technology |
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APTC60HM70T3 bảng dữ liệu(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page ![]() APTC60HM70T3 APT website – http://www.advancedpower.com 1 - 6 11 Q4 14 13 23 Q2 10 8 7 3 4 22 29 31 R1 15 16 32 26 19 18 Q1 Q3 27 30 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 39 ID Continuous Drain Current Tc = 80°C 29 IDM Pulsed Drain current 120 A VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 70 m Ω PD Maximum Power Dissipation Tc = 25°C 250 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 EAS Single Pulse Avalanche Energy 1800 mJ VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability Full - Bridge Super Junction MOSFET Power Module |
Số phần tương tự - APTC60HM70T3 |
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Mô tả tương tự - APTC60HM70T3 |
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