Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

MS2362

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

DESCRIPTION:

DESCRIPTION:

The MS2362 is a gold metallized silicon, NPN power transistor

designed for applications requiring high peak power and low duty cycles such as IFF, DME,

and TACAN. The MS2362 utilizes internal impedance matching for improved broadband

performance and low thermal resistance.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

5.5

A

Power Dissipation

218.7

W

Junction Temperature

200

°°C

Storage Temperature

-65 to +150

°°C

Features

• DESIGNED FOR HIGH POWER PULSED IFF, DME, AND

TACAN APPLICATIONS

• 80 W (typ.) IFF 1030 – 1090 MHz

• 75 W (min.) DME 1025 – 1150 MHz

• 50 W (typ.) TACAN 960 – 1215 MHz

• 1025 - 1150 MHz

• GOLD METALLIZATION

• P

• G

• INTERNAL INPUT MATCHING

• INFINITE VSWR CAPABILITY @ RATED CONDITIONS

• COMMON BASE CONFIGURATION

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855