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MS2322

DESCRIPTION:

DESCRIPTION:

The MS2322 is a gold metallized, silicon NPN power transistor

designed for pulsed applications with low duty cycles such as

IFF, DME and TACAN. Internal impedance matching is utilized

for maximum broadband performance and simplified external

matching.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Base Voltage

65

V

Collector-Emitter Voltage

65

V

Emitter-Base Voltage

3.5

V

Device Current

1.5

A

Power Dissipation

87.5

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

2.0

°°C/W

Features

Features

• 1025 - 1150 MHz

• 50 VOLT OPERATION

• P

• G

• 20:1 VSWR CAPABILITY @ RATED CONDITIONS

• COMMON BASE CONFIGURATION

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

.280 4LSL (M115)

Epoxy Sealed

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855