MS1279

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DESCRIPTION:

DESCRIPTION:

The MS1279 is a gold metallized epitaxial silicon NPN planar

transistor using diffused emitter ballast resistors for high

linearity Class AB operation in VHF and Band III television

transmitters and transposers.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Emitter Voltage

35

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

4.0

V

Device Current

8.0

A

Power Dissipation

140

W

Junction Temperature

+200

°°C

Storage Temperature

-65 to +150

°°C

Thermal Data

Thermal Data

Thermal Resistance Junction-case

1.5

°°C/W

Features

Features

• 170- 230 MHz

• 25 VOLTS

• P

• G

• GOLD METALLIZATION

• INTERNAL INPUT MATCHING

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

TV/LINEAR APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855