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ARF521 bảng dữ liệu(PDF) 1 Page - Advanced Power Technology |
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ARF521 bảng dữ liệu(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 165V 150W 150MHz The ARF521 is an RF power transistor designed for high voltage operation in broadband HF, narrow band ISM and MRI power amplifiers up to 150MHz. • Specified125Volt,81MHzCharacteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 50% • High Voltage Breakdown and Large SOA for Superior Ruggedness. • Industry standard package • Low Vth thermal coefficient ARF521 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com G D S APT STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS R DS(ON) I DSS I GSS g fs Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 (I D(ON) = 5A, VGS = 10V) Zero Gate Voltage Drain Current (V DS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 50V, VGS = 0, TC = 125°C) Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) Forward Transconductance (V DS = 15V, ID = 5A) Gate Threshold Voltage (V DS = VGS, ID = 200mA) MIN TYP MAX 500 0.56 8 25 250 ±100 3 3.6 24 UNIT Volts Ohms µA nA mhos Volts Symbol V DSS I D V GS P D T J,TSTG T L Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Gate-Source Voltage Total Device Dissipation @ T C = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF521 500 10 ±30 250 -55 to 175 300 UNIT Volts Amps Volts Watts °C V GS(TH) THERMAL CHARACTERISTICS Symbol R θJC R θCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX 0.60 0.1 UNIT °C/W |
Số phần tương tự - ARF521 |
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Mô tả tương tự - ARF521 |
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