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DF3D6.8MS bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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DF3D6.8MS bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
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2 / 8 page ![]() DF3D6.8MS 2 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, T Electrical Characteristics (Unless otherwise specified, Taaaa = 25 = 25 = 25 = 25 )))) VRWM: Working peak reverse voltage VBR: Reverse breakdown voltage IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance IF: Forward current VF: Forward voltage Fig. Fig. Fig. Fig. 4.1 4.1 4.1 4.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Working peak reverse voltage Reverse breakdown voltage Reverse current Clamp voltage Input/output-to-ground capacitance Input/output-to-ground capacitance difference Total capacitance Symbol VRWM VBR IR VC Ct-GND ∆Ct-GND Ct Note (Note 1) (Note 2) (Note 2) Test Condition IBR = 5 mA VRWM = 5 V IPP = 1 A VR = 0 V, f = 1 MHz (Between I/O and GND pins) VR = 0 V, f = 1 MHz (Between I/O and GND pins) VR = 0 V, f = 1 MHz (Between I/O and I/O pins) Min 6 Typ. 11 0.5 0.01 0.22 Max 5 0.5 0.9 0.5 Unit V V µA V pF pF Note 1: Based on IEC61000-4-5 8/20 µs pulse. Note 2: Guaranteed by design. 5. 5. 5. 5. Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Guaranteed ESD Protection (Note) Test Condition IEC61000-4-2 (Contact discharge) ESD Protection ± 8 kV Note: Criterion: No damage to devices. 2014-10-16 Rev.4.0 |
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