DF3A6.2F

2014-03-01

1

TOSHIBA Diodes For Protecting Against ESD

DF3A6.2F

Product for Use Only as Protection against Electrostatic

Discharge (ESD)

*This product is for protection against electrostatic discharge (ESD) only

and is not intended for any other usage, including without limitation,

the constant voltage diode application.

• The mounting of two devices on an ultra-compact package allows the

number of parts and the mounting cost to be reduced.

Abusolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Power dissipation

P

150*

mW

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Zener voltage

VZ

IZ = 5 mA

5.8

6.2

6.6

V

Dynamic impedance

ZZ

IZ = 5 mA

⎯

⎯

30

Ω

Reverse current

IR

VR = 3 V

⎯

⎯

1.0

μA

Terminal capacitance

(between Cathode and Anode)

CT

VR = 0 V, f = 1 MHz

⎯

55

⎯

pF

Unit: mm

1. Cathode1

2. Cathode2

3. Anode

JEDEC

―

JEITA

―

TOSHIBA

1-3G1E

Weight: 12 mg (typ.)

Start of commercial production

2005-12