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APT466FL bảng dữ liệu(PDF) 1 Page - Advanced Power Technology |
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APT466FL bảng dữ liệu(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 200V 300W 45MHz The ARF466FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of operation. • Specified 150 Volt, 40.68 MHz Characteristics: • Output Power = 300 Watts. • Gain = 16dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Flangeless RF Package. • Low Vth thermal coefficient. • LowThermalResistance. • Optimized SOA for Superior Ruggedness. STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS R DS(ON) I DSS I GSS g fs V GS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250 µA) Drain-Source On-State Resistance 1 (V GS = 10V , I D = 6.5A ) Zero Gate Voltage Drain Current (V DS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 800V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (V GS = ±30V, VDS = 0V) Forward Transconductance (V DS = 25V, ID = 6.5A) Gate Threshold Voltage (V DS = VGS, ID = 1mA) MIN TYP MAX 1000 0.90 25 250 ±100 3.3 7 9 24 UNIT Volts ohms µA nA mhos Volts Symbol V DSS V DGO I D V GS P D R θJC T J,TSTG T L Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ T C = 25°C Gate-Source Voltage Total Power Dissipation @ T C = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. ARF466FL 1000 1000 13 ±30 450 0.30 -55 to 175 300 UNIT Volts Amps Volts Watts °C/W °C G D S ARF466FL ARF466FL |
Số phần tương tự - APT466FL |
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Mô tả tương tự - APT466FL |
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