APT75GT120JR

DYNAMIC CHARACTERISTICS

Symbol

C

ies

C

oes

C

res

V

GEP

Q

g

Q

ge

Q

gc

SSOA

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

t

d(on)

t

r

t

d(off)

t

f

E

on1

E

on2

E

off

Test Conditions

Capacitance

V

f = 1 MHz

Gate Charge

V

V

I

T

15V, L = 100µH,V

Inductive Switching (25°C)

V

V

I

R

T

Inductive Switching (125°C)

V

V

I

R

T

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Gate-Emitter Charge

Gate-Collector ("Miller") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

MIN

TYP

MAX

2570

250

155

7.5

240

15

110

225

50

65

375

25

8045

8845

2970

50

65

415

29

8050

12660

4215

UNIT

pF

V

nC

A

ns

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, I

3 See MIL-STD-750 Method 3471.

4 E

on1

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.

5 E

loss. (See Figures 21, 22.)

6 E

APT Reserves the right to change, without notice, the specifications and information contained herein.

THERMAL AND MECHANICAL CHARACTERISTICS

UNIT

°C/W

gm

Volts

MIN

TYP

MAX

.26

N/A

29.2

2500

Characteristic

Junction to Case

(IGBT)

Junction to Case

(DIODE)

Package Weight

Symbol

W

T

V

Isolation