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APT40GP90JDQ2 bảng dữ liệu(PDF) 1 Page - Advanced Power Technology |
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APT40GP90JDQ2 bảng dữ liệu(HTML) 1 Page - Advanced Power Technology |
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1 / 9 page ![]() APT40GP90JDQ2 TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (V GE = 0V, I C = 350µA) Gate Threshold Voltage (V CE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 40A, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 40A, Tj = 125°C) Collector Cut-off Current (V CE = 900V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (V CE = 900V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (V GE = ±20V) Symbol V (BR)CES V GE(TH) V CE(ON) I CES I GES Units Volts µA nA Symbol V CES V GE I C1 I C2 I CM SSOA P D T J,TSTG T L APT40GP90JDQ2 900 ±30 64 27 160 160A @ 900V 284 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ T J = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 900 3 4.5 6 3.2 3.9 2.7 350 1500 ±100 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • SSOA Rated • Low Gate Charge • Ultrafast Tail Current shutoff POWER MOS 7® IGBT ® C E G 900V APT40GP90JDQ2 SO T-2 27 ISOTOP® file # E145592 "UL Recognized" G E E C |
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