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APT25GP90B bảng dữ liệu(PDF) 2 Page - Advanced Power Technology

tên linh kiện APT25GP90B
Giải thích chi tiết về linh kiện  POWER MOS 7 IGBT
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Trang chủ  http://www.advpowertech.com
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APT25GP90B bảng dữ liệu(HTML) 2 Page - Advanced Power Technology

  APT25GP90B Datasheet HTML 1Page - Advanced Power Technology APT25GP90B Datasheet HTML 2Page - Advanced Power Technology APT25GP90B Datasheet HTML 3Page - Advanced Power Technology APT25GP90B Datasheet HTML 4Page - Advanced Power Technology APT25GP90B Datasheet HTML 5Page - Advanced Power Technology APT25GP90B Datasheet HTML 6Page - Advanced Power Technology  
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APT25GP90B
DYNAMIC CHARACTERISTICS
Symbol
Cies
Coes
Cres
VGEP
Qg
Qge
Qgc
SSOA
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
td(on)
tr
td(off)
tf
Eon1
Eon2
Eoff
Test Conditions
Capacitance
VGE = 0V, VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCE = 450V
IC = 25A
TJ = 150°C, RG = 5Ω, VGE =
15V, L = 100µH,VCE = 900V
Inductive Switching (25°C)
VCC = 600V
VGE = 15V
IC = 25A
RG = 5Ω
TJ = +25°C
Inductive Switching (125°C)
VCC = 600V
VGE = 15V
IC = 25A
RG = 5Ω
TJ = +125°C
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4
Turn-on Switching Energy (Diode) 5
Turn-off Switching Energy 6
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy 4 4
Turn-on Switching Energy (Diode) 55
Turn-off Switching Energy 66
MIN
TYP
MAX
2100
220
40
7.5
110
16
47
110
13
16
55
55
TBD
740
370
13
16
95
95
TBD
1120
750
UNIT
pF
V
nC
A
ns
µJ
ns
µJ
UNIT
°C/W
gm
MIN
TYP
MAX
.30
N/A
5.90
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
Symbol
RΘJC
RΘJC
WT
THERMAL AND MECHANICAL CHARACTERISTICS
1
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4E
on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5E
on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6E
off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
y



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