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APT15GP90K bảng dữ liệu(PDF) 1 Page - Advanced Power Technology |
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APT15GP90K bảng dữ liệu(HTML) 1 Page - Advanced Power Technology |
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1 / 6 page ![]() APT15GP90K(G) TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (V GE = 0V, I C = 350µA) Gate Threshold Voltage (V CE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 15A, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 15A, Tj = 125°C) Collector Cut-off Current (V CE = 900V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (V CE = 900V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (V GE = ±20V) Symbol V (BR)CES V GE(TH) V CE(ON) I CES I GES Units Volts µA nA Symbol V CES V GE I C1 I C2 I CM SSOA P D T J,TSTG T L APT15GP90K(G) 900 ±30 43 21 60 60A @ 900V 250 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ T J = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 900 3 4.5 6 3.2 3.9 2.7 250 2500 ±100 900V APT15GP90K APT15GP90KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • SSOA Rated • Low Gate Charge • Ultrafast Tail Current shutoff POWER MOS 7® IGBT G C E TO-220 |
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