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VS-VSK.230..PBF bảng dữ liệu(PDF) 4 Page - Vishay Siliconix |
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VS-VSK.230..PBF bảng dữ liệu(HTML) 4 Page - Vishay Siliconix |
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4 / 9 page ![]() VS-VSK.230..PbF Series www.vishay.com Vishay Semiconductors Revision: 12-Nov-2018 4 Document Number: 93053 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - On-State Power Loss Characteristics Fig. 4 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - On-State Power Loss Characteristics Average On-state Current (A) 250 200 150 150 200 250 300 350 100 0 50 100 50 0 Ø Conduction Angle VSK.230..Series Per Junction T J = 130 °C 180° 120° 90° 60° 30° RMS limit Average On-State Current (A) 250 200 150 400 350 300 150 200 250 300 350 100 0 50 100 50 0 VSK.230..Series Per Junction T J = 130 °C 180° 120° 90° 60° 30° RMS limit Conduction Period Ø DC Number Of Equal Amplitude Half Cycle Current Pulses (N) 7000 6500 6000 5500 5000 4500 4000 3500 3000 1 10 100 VSK.230..Series Per Junction At any rated load condition and with rated V RRM applied following surge Initial T J = 130 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Pulse Train Duration (s) 7000 7500 6500 6000 5500 5000 4500 4000 3500 3000 0.01 0.1 1 VSK.230..Series Per Junction Maximum non repetitive surge current vs. pulse drain duration.Control of conduction may not be maintained. No voltage reapplied Rated V RRM applied Initial T J = 130 °C Total RMS Output Current (A) Maximum Allowable Ambient Temperature (°C) 700 600 500 400 300 200 100 200 300 400 500 20 40 60 80 100 120 100 0 0 VSK.230..Series Per Module T J = 130 °C 180° 120° 90° 60° 30° 0.12 K/W 0.16 K/W 0.2 K/W 0.1 K/W 0.25 K/W 0.3 K/W Conduction Angle Ø Ø |
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