DocID027888 Rev1

3/9

STTH240F04

Characteristics

Table 5. Dynamic characteristics (per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Test conditions

Min. Typ.

Max.

Unit

trr

Reverse recovery time

IF = 0.5 A, Irr = 0.25 A, IR = 1 A

80

ns

IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V

70

95

IF = 100 A, dIF/dt = -200 A/µs, VR = 50 V,

Tj =125 °C

100

140

IRM

Reverse recovery current

IF = 100 A, dIF/dt = -200 A/µs, VR = 400 V,

Tj = 125 °C

15

20

A

QRR

Reverse recovery charge

750

nC

S

Softness factor

0.3

tfr

Forward recovery time

IF = 100 A, dIF/dt = 200 A/µs, VFR = 1.5 x VFmax

500

800

ns

VFP

Forward recovery voltage

IF = 100 A, dIF/dt = 200 A/µs

2.9

V

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, per diode)

Figure 3. Forward voltage drop versus forward

current (maximum values, per diode)

Figure 4. Relative variation of thermal

impedance junction to case versus pulse

duration